| dc.creator |
Andrew, R. |
|
| dc.creator |
Loeb, H. W. |
|
| dc.date |
2015-09-02T13:33:14Z |
|
| dc.date |
2015-09-02T13:33:14Z |
|
| dc.date |
1967-01 |
|
| dc.date.accessioned |
2022-05-09T09:54:56Z |
|
| dc.date.available |
2022-05-09T09:54:56Z |
|
| dc.identifier |
http://dspace.lib.cranfield.ac.uk/handle/1826/9380 |
|
| dc.identifier.uri |
https://reports.aerade.cranfield.ac.uk/handle/1826.2/4223 |
|
| dc.description |
The e::tension of the resistance network analogue method to the study
of a M.O.S.T. structure is described. By means of an iterative technique,
data regarding channel current, field distribution, surface charge and
position of pinch-off point as function of gate and drain voltagen can be
obtained which do not involve the usual 'gradual' channel approximation
Results for a particular device geometry are presented.
A discussion of a digital computer approach to the solution of semiconductor
device current flow problems is included, together with preliminary
results. |
|
| dc.language |
en |
|
| dc.publisher |
College of Aeronautics |
|
| dc.relation |
119 |
|
| dc.relation |
COA/M-119 |
|
| dc.title |
C.V.D. annual report: January, 1967 research project ru27-1 : analogue study of semiconductor device structures |
|
| dc.type |
Report |
|